Semiconductor laser device
文献类型：专利
| 作者 | YANO MORICHIKA; HAYASHI HIROSHI; HIJIKATA TOSHIKI |
| 发表日期 | 1989-07-11 |
| 专利号 | JP1989175282A |
| 著作权人 | SHARP CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser device |
| 英文摘要 | PURPOSE:To make a light beam oscillate with a foundamental mode and a high output power, by forming an optical waveguide extending in the resonance direction by virtue of difference in effective refractive index in an active layer and by varying effective refractive indexes active layers regions located at the sides of the optical waveguide. CONSTITUTION:At a lateral center part of a wafer, a groove part 14 having a V-shaped cross section is formed around the boundary part between the first and second current bottleneck layers 12 and 13. An opening of the groove part 14 is relatively wide and its base reaches the inside of a substrate 1 Then, a p-type Ga0.6Al0.4As first clad layer 15, a p-type Ga0.86Al0.14As active layer 16, an n-type Ga0.6Al0.4As second clad layer 17, and an n-type GaAs cap layer 18 are laminated in order in the groove 14 and on a GaAs protecting layer 32. After that, a p-side electrode 21 is provided on the substrate 11 and an n-side electrode 22 is provided on a cap layer 18 to manufacture a semiconductor laser device. As this device varies respective effective refractive indexes of the regions in the active layer, even a high output power of a light beam can be obtained stably with a foundamental mode and yet, this approach improves the lifetime of this device and its light beam can be used suitably a light source of an optical disk device. |
| 公开日期 | 1989-07-11 |
| 申请日期 | 1987-12-29 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/84867]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | SHARP CORP |
| 推荐引用方式 GB/T 7714 | YANO MORICHIKA,HAYASHI HIROSHI,HIJIKATA TOSHIKI. Semiconductor laser device. JP1989175282A. 1989-07-11. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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