Semiconductor laser
文献类型：专利
| 作者 | OKUDA MASAHIRO |
| 发表日期 | 1989-07-19 |
| 专利号 | JP1989181585A |
| 著作权人 | CANON INC |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser |
| 英文摘要 | PURPOSE:To emit two beams of light of different wavelengths or of variable wavelengths by providing on a partial region of a deposition layer a stripe- shaped impurity diffusion region of an opposite conductivity type to that of a semiconductor substrate, and further providing electrodes on said region, on other regions, and on the lower surface of the semiconductor substrate. CONSTITUTION:Stripe-shaped impurity diffusion regions 11, 12 of an opposite conductivity type to that of a semiconductor substrate 1 are provided on a partial region of a deposition layer such that they penetrate the upper part of a third cladding layer 6 and then a first active cladding layer 2. Electrodes are provided on a region 10, on another region 8, and on the lower surface 9 of the semiconductor substrate Hereby, there are established two current paths, so that the two active layers 3, 5 emit respectively independently two light beams located in close vicinity to each other, which beams can be changed in wavelengths by changing compositions and structures of the first and second active layers 3, 5. |
| 公开日期 | 1989-07-19 |
| 申请日期 | 1988-01-12 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/84868]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | CANON INC |
| 推荐引用方式 GB/T 7714 | OKUDA MASAHIRO. Semiconductor laser. JP1989181585A. 1989-07-19. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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