Method for reducing facet reflectivities of semiconductor light sources and device thereof
文献类型：专利
| 作者 | RIDEOUT WILLIAM C; EICHEN ELLIOT |
| 发表日期 | 1990-12-16 |
| 专利号 | CA2017732A1 |
| 著作权人 | GTE LABORATORIES INCORPORATED |
| 国家 | 加拿大 |
| 文献子类 | 发明申请 |
| 其他题名 | Method for reducing facet reflectivities of semiconductor light sources and device thereof |
| 英文摘要 | 89-3-614 METHOD FOR REDUCING FACET REFLECTIVITIES OF SEMICONDUCTOR LIGHT SOURCES AND DEVICE THEREOF ABSTRACT A novel method for reducing the facet reflectivitiesof semiconductor light sources and amplifiers concerns theuse of a bulk (non-waveguiding) index-matched regrown endcap region at both of the major facet surfaces of theamplifier. The amplifier has a tilted stripe geometrywhich, in combination with the end cap regions, enable theamplifier to reproducibly achieve facet reflectivities ofless than 10-5 while avoiding a facet coating step. Theimproved optical amplifier is more amenable to massproduction and less sensitive to both wavelength andpolarization. |
| 公开日期 | 1990-12-16 |
| 申请日期 | 1990-05-29 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/84872]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | GTE LABORATORIES INCORPORATED |
| 推荐引用方式 GB/T 7714 | RIDEOUT WILLIAM C,EICHEN ELLIOT. Method for reducing facet reflectivities of semiconductor light sources and device thereof. CA2017732A1. 1990-12-16. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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