Semiconductor laser
文献类型：专利
| 作者 | OISHI AKIO; HIRAO MOTONAO; TSUJI SHINJI; NAKAMURA HITOSHI; MATSUMURA HIROYOSHI |
| 发表日期 | 1987-03-18 |
| 专利号 | JP1987061381A |
| 著作权人 | HITACHI LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser |
| 英文摘要 | PURPOSE:To obtain a buried semiconductor laser which increases a current blocking layer and operates at high temperature with high output by forming a P-type or N-type layer which acts as the blocking layer before forming a mesa. CONSTITUTION:Zn or Cd is diffused in an N-type InP substrate 1 except a portion to become a current path to form a P-type layer 2, and an InGaAsP active layer 6, a P-type InP clad layer 7 and a P-type InGaAsP cap layer 8 are grown. A reverse mesa is etched in a portion to become a current path, and a P-type InP or InGaAsP layer 3, an N-type InP layer 4, an N-type InGaAsP layer 5 are continuously grown by burying growth on both sides. Thus, the layer 2 which acts as a current blocking layer can be readily increased in thickness to improve the end pressure, thereby operating at high temperature with high output. |
| 公开日期 | 1987-03-18 |
| 申请日期 | 1985-09-11 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/84873]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | HITACHI LTD |
| 推荐引用方式 GB/T 7714 | OISHI AKIO,HIRAO MOTONAO,TSUJI SHINJI,et al. Semiconductor laser. JP1987061381A. 1987-03-18. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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