Semiconductor laser and manufacture thereof
文献类型：专利
| 作者 | MORI KENZO; KONNO NOBUAKI |
| 发表日期 | 1991-11-29 |
| 专利号 | JP1991268375A |
| 著作权人 | MITSUBISHI ELECTRIC CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser and manufacture thereof |
| 英文摘要 | PURPOSE:To manufacture an actual refractive index waveguide type semiconductor laser having high luminous efficiency and a semiconductor laser having a low threshold by forming the light-emitting region of an active layer so as to have a curve on viewing from the reflective end face side of laser beams. CONSTITUTION:An active layer 5 is curved, thus forming a refractive index in the lateral direction. Beams are confined near the central section of a trench 10 by the refractive index in the lateral direction and field-strength distribution and the spread of beams in the lateral direction is limited, and laser oscillation is obtained by a Fabry-Perot type resonator constituted of opposed cleavage end faces vertical in the depth direction of the striped trench 10 from beams waveguided by such a waveguide. Accordingly, an actual refractive index waveguide type semiconductor laser having high luminous efficiency can be acquired, and a semiconductor laser having a low threshold can be manufactured with excellent reproducibility. |
| 公开日期 | 1991-11-29 |
| 申请日期 | 1989-10-30 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/84878]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MITSUBISHI ELECTRIC CORP |
| 推荐引用方式 GB/T 7714 | MORI KENZO,KONNO NOBUAKI. Semiconductor laser and manufacture thereof. JP1991268375A. 1991-11-29. |
入库方式： OAI收割
来源：西安光学精密机械研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。