Semiconductor laser device
文献类型：专利
| 作者 | EGUCHI KAZUHIRO; OBA YASUO; KUSHIBE MITSUHIRO; FUNAMIZU MASAHISA |
| 发表日期 | 1989-08-28 |
| 专利号 | JP1989214190A |
| 著作权人 | TOSHIBA CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser device |
| 英文摘要 | PURPOSE:To enable single mode oscillation to be made and improved element characteristics to be obtained by adding rare-earth elements of a specific concentration to an active layer. CONSTITUTION:An n-type InP clad layer 12 which is also used as buffer layer is formed on an InP substrate 11, and a mesa stripe is formed on it where a GaInAsP active layer 13. a GaInAsP light guide layer 14, an n-type InP clad layer 15 is laminated. Both sides of mesa are embedded with a high-resistance InP embedding layer 16, a P-type GaInAsP contact layer 17 is formed on uppermost layers 15 and 18 of mean, and a p-side electrode 19 is provided on an n-side electrode 18 and the layer 17 at the lower surface of the substrate 1 Then, rare-earth element Er is added to an active layer 15 with a concentration of 1X10cm or less. |
| 公开日期 | 1989-08-28 |
| 申请日期 | 1988-02-23 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/84882]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | TOSHIBA CORP |
| 推荐引用方式 GB/T 7714 | EGUCHI KAZUHIRO,OBA YASUO,KUSHIBE MITSUHIRO,et al. Semiconductor laser device. JP1989214190A. 1989-08-28. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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