Substrate for epitaxial growth and epitaxial growth process
文献类型：专利
| 作者 | SUZUKI, KENJI; SATO, TSUTOMU; HIRANO, RYUICHI |
| 发表日期 | 2008-10-16 |
| 专利号 | WO2008123242A1 |
| 著作权人 | NIPPON MINING & METALS CO., LTD. |
| 国家 | 世界知识产权组织 |
| 文献子类 | 发明申请 |
| 其他题名 | Substrate for epitaxial growth and epitaxial growth process |
| 英文摘要 | Disclosed is a substrate for epitaxial growth, which enables to obtain an epitaxial layer having uniform PL characteristics when the epitaxial layer is grown on a group III-V compound semiconductor substrate such as an InP substrate. Also disclosed is an epitaxial growth process. Specifically, during a process wherein an epitaxial layer composed of a compound semiconductor such as an InGaAsP layer is vapor deposited on a group III-V semiconductor substrate such as an InP substrate, the preset temperature is adequately controlled by taking it into consideration that the substrate temperature (growth temperature) changes due to the size (major axis) of an elliptical etch pit on the backside of the substrate. |
| 公开日期 | 2008-10-16 |
| 申请日期 | 2008-03-25 |
| 状态 | 未确认 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/84891]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | NIPPON MINING & METALS CO., LTD. |
| 推荐引用方式 GB/T 7714 | SUZUKI, KENJI,SATO, TSUTOMU,HIRANO, RYUICHI. Substrate for epitaxial growth and epitaxial growth process. WO2008123242A1. 2008-10-16. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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