Integrated circuit for light amplification
文献类型：专利
| 作者 | OE KUNISHIGE |
| 发表日期 | 1991-02-26 |
| 专利号 | JP1991044988A |
| 著作权人 | NIPPON TELEGR & TELEPH CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Integrated circuit for light amplification |
| 英文摘要 | PURPOSE:To obtain a light amplification integration circuit capable of preventing the generation of unrequired emission and improving optical sensitivity by using a light amplifier which includes rare earth elements, such as erbium, and amplifying only a signal light equivalent to the level of said rare earth elements. CONSTITUTION:A light amplifier 21 which has a GaInAsP layer 11 containing rare earth elements, such as erbium and a photodetector 23 are integrated with an optical waveguide 22 so that may be under a monolithic structure. Under this structure, inverse bias is applied between a p type electrode 8 and an n type electrode 9 of the photodetector 23 while forward bias is applied between the electrode 8 and electrode 9 of the optical amplifier 21 and incident light 20 is entered under the above state. If the wavelength of the light 20 is the optically amplified wavelength of erbium, the wavelength is amplified with an amplifier 21, and then is received by the detector 23 by way of a waveguide passage 22. Moreover, no light other than the wavelength is generated in terms of the optical output of the amplifier 2 Therefore, the signal light is further amplified and intensified, thereby generating no other light which may become a noise. It is, therefore, possible to improve an S/N ratio to a great extent. |
| 公开日期 | 1991-02-26 |
| 申请日期 | 1989-07-13 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/84895]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | NIPPON TELEGR & TELEPH CORP |
| 推荐引用方式 GB/T 7714 | OE KUNISHIGE. Integrated circuit for light amplification. JP1991044988A. 1991-02-26. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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