Semiconductor laser
文献类型：专利
| 作者 | FUJIWARA KENZO |
| 发表日期 | 1990-08-22 |
| 专利号 | JP1990211686A |
| 著作权人 | MITSUBISHI ELECTRIC CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser |
| 英文摘要 | PURPOSE:To obtain a semiconductor laser conducting energy relaxation with injection to an active layer of electrons at high speed by setting the conduction-band end energy stepped section of an active layer semiconductor doped in a p type and a semiconductor layer semiconductor on the electron injection side or a clad layer semiconductor so as to be brought to the integral times of the longitudinal optical phonon energy quantum of the active layer semiconductor. CONSTITUTION:Electrons injected by forward bias from an n side electrode are injected from a superlattice 4 for, injecting electrons to an active layer 5 through an n-type ohmic layer 2 and an n-type clad layer 3, radiative-recombined with holes in the active layer, and amplified by an induced emission process in a laser resonator, thus acquiring laser oscillation. Since a conduction-band end energy stepped section is set so as to be brought to the integral times mhomegaLO (m: an integer) of the longitudinal optical phonon energy of the active layer 5 when electrons are injected from the superlattice layer 4 to the active layer 5, electron energy relaxation in the active layer 5 is generated only by longitudinal optical phonon emission at high speed, and electrons can be transferred at high speed under the conduction-band ground state of the active layer 5, and can be recombined with holes in the active layer. |
| 公开日期 | 1990-08-22 |
| 申请日期 | 1989-02-13 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/84899]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MITSUBISHI ELECTRIC CORP |
| 推荐引用方式 GB/T 7714 | FUJIWARA KENZO. Semiconductor laser. JP1990211686A. 1990-08-22. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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