Semiconductor laser device
文献类型：专利
| 作者 | NAKATSUKA SHINICHI; SAITO KATSUTOSHI; KAJIMURA TAKASHI |
| 发表日期 | 1988-08-22 |
| 专利号 | JP1988202083A |
| 著作权人 | 株式会社日立製作所 |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser device |
| 英文摘要 | PURPOSE:To easily obtain a self-sustained oscillation type semiconductor laser which is resistive to noise due to return light by providing a clad layer with a layer having a refraction index larger than that of one clad layer at least or a layer which absorbs the laser beam. CONSTITUTION:The oscillating condition of laser is allowed to ba capable of taking a plurality of modes having approximated spectra by providing a laser having a refraction index larger than that of clad layer or a layer which absorbs a larger amount of light into the clad layer including the surface of semiconductor laser. This mode separating layer may be formed by a plurality of layers and in this case it is desirable to set a film thickness to 30-1000Angstrom . The other semiconductor layer may be formed as a single layer or multilayered superlattice layer. Thereby, the self-sustained oscillation is easily generated due to vibration of mode between a couple of laser spectra and the semiconductor laser which is resistive to noise due to return light can easily be obtained. |
| 公开日期 | 1988-08-22 |
| 申请日期 | 1987-02-18 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/84900]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | 株式会社日立製作所 |
| 推荐引用方式 GB/T 7714 | NAKATSUKA SHINICHI,SAITO KATSUTOSHI,KAJIMURA TAKASHI. Semiconductor laser device. JP1988202083A. 1988-08-22. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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