Semiconductor laser element and manufacture thereof
文献类型：专利
| 作者 | ONO YUICHI; OISHI AKIO |
| 发表日期 | 1991-08-13 |
| 专利号 | JP1991185889A |
| 著作权人 | HITACHI LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser element and manufacture thereof |
| 英文摘要 | PURPOSE:To enhance the controllability of the thickness of each layer and to make low a stopping resistance by a method wherein a second conductivity type second clad layer formed on a current stopping layer and an etching stopper layer, a second conductivity type buffer layer formed on the clad layer and a second conductivity type contact layer are provided. CONSTITUTION:An N-type (Al0.5Ga0.5)0.51In0.49P clad layer 3, an undoped GaInP active layer 4, a P-type (Al0.5Ga0.5)0.51In0.49P clad layer 5, a P-type GaInP etching stopper layer 6 and an N-type GaAs current stopping layer 7 are provided on a substrate 1 by performing a first growth. The thickness of the layer 5 at this time is formed into a thickness, in which an optical confinement is easily possible by the layer 7. Then, the layer 7 is etched away in a striped form using a photoresist mask. After that, a P-type (Al0.5Ga0.5)0.51In0.49P clad layer 10, a P-type GaInP buffer layer 11 and a p GaAs contact layer 12 are formed in order by performing a second growth. |
| 公开日期 | 1991-08-13 |
| 申请日期 | 1989-12-15 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/84907]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | HITACHI LTD |
| 推荐引用方式 GB/T 7714 | ONO YUICHI,OISHI AKIO. Semiconductor laser element and manufacture thereof. JP1991185889A. 1991-08-13. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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