Semiconductor laser device
文献类型：专利
| 作者 | UOMI KAZUHISA; KONO TOSHIHIRO; ONO YUICHI; SASAKI YOSHIMITSU; KAJIMURA TAKASHI |
| 发表日期 | 1987-11-12 |
| 专利号 | JP1987260380A |
| 著作权人 | HITACHI LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser device |
| 英文摘要 | PURPOSE:To remove abnormal growth and a crystal defect on the second growth start interface when a semiconductor laser is manufactured by using a crystal growth method having an unbalanced growth mechanism, such as an MOCVD method, an MBE method, etc., and to obtain the semiconductor laser, a transverse mode of which is stabilized and which has high reliability, by employing a liquid growth method for buried growth. CONSTITUTION:On a GaAs-GaAlAs group semiconductor laser, a buffer layer such as an N-GaAs buffer layer 2, a clad layer such as an N-Ga1-xAlx As clad layer 3, an active layer such as an undoped Ga1-yAlyAs active layer 4, a clad layer such as a P-Ga1-xAlxAs clad layer 5, a meltback layer such as a P-GaAs meltback layer 6, a layer such as a P-Ga1-x AlxAs layer 7 and a current constriction layer such as an N-GaAs current constriction layer 8 are formed onto a substrate such as an N-GaAs substrate 1 in succession. The current constriction layer 8 is removed selectively and a groove stripe is shaped, the P-GaAlAs layer 7 in a groove is removed, and the surface of the P-GaAs layer 6 is exposed. When liquid growth is conducted in a liquid growth furnace under the state, the P-GaAs layer 6 is melted back and melted into a liquid melt, and the P-GaAlAs layer 5 is exposed. A P-Ga1-xAlxAs layer 9 and a P-GaAs layer 10 are grown through a liquid growth method, and a P electrode 11 and an N electrode 12 are formed. |
| 公开日期 | 1987-11-12 |
| 申请日期 | 1986-05-06 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/84911]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | HITACHI LTD |
| 推荐引用方式 GB/T 7714 | UOMI KAZUHISA,KONO TOSHIHIRO,ONO YUICHI,et al. Semiconductor laser device. JP1987260380A. 1987-11-12. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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