Semiconductor laser and manufacture thereof
文献类型：专利
| 作者 | MANNOU MASAYA; ONAKA SEIJI |
| 发表日期 | 1991-09-12 |
| 专利号 | JP1991209893A |
| 著作权人 | MATSUSHITA ELECTRIC IND CO LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser and manufacture thereof |
| 英文摘要 | PURPOSE:To enable a lateral mode control laser to oscillate stably over a long time by a method wherein a second conductivity type third clad layer is provided onto the stripe-like exposed part of a second conductivity type buffer layer. CONSTITUTION:A second conductivity type buffer layer 5 is deposited on the side of a clad layer 4 opposite to a first conductivity type compound semiconductor substrate 1, a first conductivity type current constriction layer 8 is selectively formed leaving a stripe-like part on the second conductivity type buffer layer 5, and a second conductivity type third clad layer 6 is formed at the stripe-like exposed part on the buffer part 5. Therefore, the first conductivity type current constriction layer 8 formed on the second conductivity type buffer layer 5 and the second conductivity type third clad layer 6 formed at the exposed part of the buffer layer 5 constitute a lateral mode control mechanism. By this setup, a lateral mode control laser oscillation can be stably obtained over many hours. |
| 公开日期 | 1991-09-12 |
| 申请日期 | 1990-01-12 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/84912]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MATSUSHITA ELECTRIC IND CO LTD |
| 推荐引用方式 GB/T 7714 | MANNOU MASAYA,ONAKA SEIJI. Semiconductor laser and manufacture thereof. JP1991209893A. 1991-09-12. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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