Manufacture of semiconductor laser
文献类型：专利
| 作者 | OTAKI KANAME |
| 发表日期 | 1990-09-10 |
| 专利号 | JP1990226780A |
| 著作权人 | MITSUBISHI ELECTRIC CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Manufacture of semiconductor laser |
| 英文摘要 | PURPOSE:To facilitate the control of film thickness by forming a saturation absorption layer capable of freely setting the film thickness in a specified range, as the surface layer for impurity introducing and regrowing. CONSTITUTION:After a lower side clad layer 2, a quantum well active layer 3, a first upper side clad layer 4, and an Si-doped MQW optical waveguide layer 5 are respectively grown on a GaAs substrate 1, a saturation absorption layer 11 of GaAs is grown. Next, a stripe-type region turning to the optical waveguide is irradiated with a convergent Be ion beam 10, thereby growing a second upper side clad layer 8 and a P-type GaAs contact layer 9 on the layer 5. After that, an amorphous region 7 and the MQW optical waveguide are formed by heat treatment. Since the layer 11 capable of freely setting the film thickness in the range of 50-200Angstrom is formed as the surface layer for impurity introducing and regrowing, the film thickness can be easily controlled. |
| 公开日期 | 1990-09-10 |
| 申请日期 | 1989-02-28 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/84913]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MITSUBISHI ELECTRIC CORP |
| 推荐引用方式 GB/T 7714 | OTAKI KANAME. Manufacture of semiconductor laser. JP1990226780A. 1990-09-10. |
入库方式： OAI收割
来源：西安光学精密机械研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。