Liquid epitaxial growth method
文献类型：专利
| 作者 | SHINOZAKI KEISUKE; TAKANO HIROSHI; KASAMA YASUHIKO; MATOBA AKIHIRO |
| 发表日期 | 1984-02-25 |
| 专利号 | JP1984034630A |
| 著作权人 | OKI DENKI KOGYO KK |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Liquid epitaxial growth method |
| 英文摘要 | PURPOSE:To control the thickness of an epitaxial growth layer formed partially by selectively coating a surface on the melt side of a substrate placed on a melt with a material which does not dissolve in the melt. CONSTITUTION:The central section of the surface on the melt 2 side is coated selectively with a layer 4 consisting of the material which does not dissolve in the melt 2, and the second source substrate 3 is not in contact with the melt 2 in the section. Consequently, the concentration of the melt in a region 21 corresponding to the layer 4 is higher than that of the melt in regions 22, 23 on both sides, and the layer is grown in an epitaxial manner under the state. As a result, the epitaxial growth layer 5 on a substrate 1 is formed so that a region 51 section corresponding to the region 21 is made thicker than region 52, 53 sections corresponding to the regions 22, 23. Accordingly, when a first layer is made ununiform in thickness and a second layer is grown on the first layer in an epitaxial manner, the first layer is grown in the epitaxial manner, and the next melt may be brought instantaneously into contact with the first layer without forming an etching process on the midway of an epitaxial growth process, and the layers are grown excellently in the epitaxial manner. |
| 公开日期 | 1984-02-25 |
| 申请日期 | 1982-08-20 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/84920]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | OKI DENKI KOGYO KK |
| 推荐引用方式 GB/T 7714 | SHINOZAKI KEISUKE,TAKANO HIROSHI,KASAMA YASUHIKO,et al. Liquid epitaxial growth method. JP1984034630A. 1984-02-25. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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