Semiconductor laser
文献类型：专利
| 作者 | YAMABAYASHI YOSHIAKI; OOTA NORIHISA; KAWANISHI SATOMOTO; NAKAGAWA SEIJI |
| 发表日期 | 1986-08-30 |
| 专利号 | JP1986196591A |
| 著作权人 | NIPPON TELEGRAPH & TELEPHONE |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser |
| 英文摘要 | PURPOSE:To obtain a semiconductor laser which can transfer optical pulses with a desirable extinction ratio, a low pattern effect and a small dynamic spectral width, by constructing the laser such that current is introduced into a belt-like active layer having a width equivalent to or smaller than the minority carrier diffusion length in the active layer, separately through first and second clad layers formed on both sides of the active layer on the surface thereof opposite to the substrate. CONSTITUTION:An InGaAs active layer 2 is provided on a part of a P type InP substrate This laser has little difference in profile between a DFB (distrib uted feedback) type and a FP (Fabry-Perot) type, so description will be made only with respect to the FP type. The active layer 2 has a width equivalent to or smaller than a minority carrier diffusion length. N-type InP clad layers 3 and 4 are provided on both sides of the active layer 2. A P-side electrode 9 is formed on the bottom face of the P-type InP substrate N-side electrodes 11 and 12 are formed on the clad layers 3 and 4 and extended to over the N-type InP layer 7. A P-side terminal and N-side terminals 14, 15 are connected to the P-side electrode 9 and the N-side electrodes 11 and 12, respectively. |
| 公开日期 | 1986-08-30 |
| 申请日期 | 1985-02-25 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/84921]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | NIPPON TELEGRAPH & TELEPHONE |
| 推荐引用方式 GB/T 7714 | YAMABAYASHI YOSHIAKI,OOTA NORIHISA,KAWANISHI SATOMOTO,et al. Semiconductor laser. JP1986196591A. 1986-08-30. |
入库方式： OAI收割
来源：西安光学精密机械研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。