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文献类型：专利
| 作者 | SANADA TATSUYUKI |
| 发表日期 | 1990-04-05 |
| 专利号 | JP1990013943B2 |
| 著作权人 | FUJITSU LTD |
| 国家 | 日本 |
| 文献子类 | 授权发明 |
| 其他题名 | - |
| 英文摘要 | PURPOSE:To remove an insulation film on a mesa with good reproducibility by a method wherein the insulation film is formed by covering the mesa on a substrate and the first covering film is formed on the region of the insulation film other than the region over the mesa with a spacing between the mesa and itself and the second covering film is formed on the whole surface of the substrate. CONSTITUTION:An insulation layer 18 is formed by covering a mesa 16 formed on a semiconductor substrate 1 The first covering film 19 is formed on the substrate 11 except the region of the mesa 16 with a spacing between the mesa and itself and then the whole surface of the substrate 11 is coated with the second covering film 20. A sink of the second covering film 20 is formed in a gap between the mesa and the first covering film 19 and the thickness of the second covering film 20 above and mesa 16 is very small. If only the region of the insulation layer 18 on the mesa 16 is exposed by dry etching, the region other than that on the mesa is completely covered with the second covering film 20 so that a complete mask for the next etching of the insulation layer is provided. |
| 公开日期 | 1990-04-05 |
| 申请日期 | 1985-02-14 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/84924]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | FUJITSU LTD |
| 推荐引用方式 GB/T 7714 | SANADA TATSUYUKI. -. JP1990013943B2. 1990-04-05. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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