Quantum well semiconductor laser and manufacture thereof
文献类型：专利
| 作者 | KAWAMURA YUICHI; ASAHI HAJIME |
| 发表日期 | 1986-02-15 |
| 专利号 | JP1986032590A |
| 著作权人 | NIPPON TELEGRAPH & TELEPHONE |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Quantum well semiconductor laser and manufacture thereof |
| 英文摘要 | PURPOSE:To obtain the titled semiconductor laser having a low threshold, a stable transverse mode and high performance and a waveband of 3-6mum by replacing the greater part of an InP buried layer formed by thermally deforming an InP layer with a polyimide resin. CONSTITUTION:An n type InP clad layer 22, an n type In0.53Ga0.47-xAlxAs clad layer 23, an n type In0.53Ga0.47-zAlzAs barrier layer 24, active layers in which In0.53Ga0.47-yAlyAs quantum well layers 25 and In0.53Ga0.47-zAlzAs barrier layers 26 are shaped alternately, a p type In0.53Ga0.47-zAlzAs barrier layer 27, a p type In0.53Ga0.47-uAluAs clad layer 28, a p type InP clad layer 29 and a p type In0.53 Ga0.47-vAlvAs electrode layer 210 are grown onto a substrate 21 in succession, and etched to a mesa shape, and the layers 23-28 are further etched excessively. One parts of the layers 22 and 29 are thermally deformed to form an InP buried layer 21 Accordingly, the buried layer 211 has an energy gap larger than the active layers and a refractive index smaller than the active layers, thus constricting currents and confining beams, then stabilizing an oscillation and a transverse mode by low-threshold currents. |
| 公开日期 | 1986-02-15 |
| 申请日期 | 1984-07-25 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/84929]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | NIPPON TELEGRAPH & TELEPHONE |
| 推荐引用方式 GB/T 7714 | KAWAMURA YUICHI,ASAHI HAJIME. Quantum well semiconductor laser and manufacture thereof. JP1986032590A. 1986-02-15. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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