Semiconductor light emitting device
文献类型：专利
| 作者 | WAKAO KIYOHIDE |
| 发表日期 | 1989-10-23 |
| 专利号 | JP1989265584A |
| 著作权人 | FUJITSU LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor light emitting device |
| 英文摘要 | PURPOSE:To specify a polarizing plane of oscillating rays by a method wherein a dielectric waveguide is provided inside a clad layer above an active layer and the waveguide is formed into a rectangular form in section perpendicular to a direction in which light rays are projected. CONSTITUTION:A planar light emitting type laser comprises a clad layer 6 above an active layer 3 and a dielectric waveguide 71 provided inside a clad layer 9. The waveguide 71 is formed into a rectangular form in section perpendicular to a direction in which light rays are projected. The light rays emitted from the active layer 3 are composed of TM polarized rays (a magnetic field component is always perpendicular to a direction in which light rays travel) and TE polarized rays (an electrical field component is always perpendicular to a direction in which light rays travel). TE polarized rays, which have an electrical field component perpendicular to side faces which include short sides, have a priority over TM polarized rays inside the waveguide 7 Laser rays start to oscillate selectively in a mode of TE polarized rays which have an electrical field component in a direction of long sides of a rectangular section of the waveguide 71 perpendicular to a direction in which light rays are projected. By these processes, oscillating rays are specified in a polarizing plane. |
| 公开日期 | 1989-10-23 |
| 申请日期 | 1988-04-15 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/84931]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | FUJITSU LTD |
| 推荐引用方式 GB/T 7714 | WAKAO KIYOHIDE. Semiconductor light emitting device. JP1989265584A. 1989-10-23. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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