Semiconductor laser
文献类型：专利
| 作者 | SEKII HIROSHI |
| 发表日期 | 1989-03-07 |
| 专利号 | JP1989059883A |
| 著作权人 | OMRON TATEISI ELECTRON CO |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser |
| 英文摘要 | PURPOSE:To improve the crystallinity and reliability of a semiconductor laser which forms laser structure on a grooved substrate by filling a groove with two lasers and forming an active laser after the third layer and by reducing the band gap of the first layer less than that of the active layer. CONSTITUTION:A p-GaAs substrate 1 whereon an n-GaAs layer 2 is grown for current blocking is used as a substrate. This substrate is V-grooved. A p-Al2Ga1-zAs layer 3 of the first layer is grown so that the groove is buried to some extent by reducing time required for growth. The groove is flattened completely by a clad layer 4 of the second layer then an active layer 5 is flattened. Light can effuse and be confined in the center (shown in strips) of the active layer 5 by controlling the flat of the clad layer 4 to a certain thickness. Because the energy gap of the layer 3 is less than that of the active layer 5, the effused light can be absorbed in the layer 3. |
| 公开日期 | 1989-03-07 |
| 申请日期 | 1987-08-31 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/84934]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | OMRON TATEISI ELECTRON CO |
| 推荐引用方式 GB/T 7714 | SEKII HIROSHI. Semiconductor laser. JP1989059883A. 1989-03-07. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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