Semiconductor light emitting device
文献类型：专利
| 作者 | KOBAYASHI MASAYOSHI; HIRAO MOTONAO; AIKI KUNIO |
| 发表日期 | 1985-04-12 |
| 专利号 | JP1985063981A |
| 著作权人 | HITACHI SEISAKUSHO KK |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor light emitting device |
| 英文摘要 | PURPOSE:To obtain the titled device having a clear radiation surface and good radiating characteristics by a method wherein the photo radiating end surface of a semiconductor light emitting element is provided by projection out of the adhesion end surface between a sub-mount, so that the extra adhesive material oozed out of a heat sink and the light emitting element may not lie over the photo radiating surface. CONSTITUTION:An Si block 2 as a heat sink is provided on a metallic mount 3 which occupies a container or part of the container, and a semiconductor laser element 1 is provided on the heat sink 2 by adhesion with adhering In 5. The photo radiating surface 4 of the element 1 is projected out of the side surface of the heat sink 2 by 1- 30mum. The cavity length of this element is usually 250- 400mum; when the distance (t) of the projected part is less than 1/10 of the cavity length, i.e., less than 40mum, bad influences due to the heat generation of an active region 6 can be ignored, and the effect of heat dissipation is the same as in the case where the element 1 is entirely placed on the heat sink 2. Therefore, the adhesive material In 5 squeezed out at the time of adhesion comes to lie over the element surface having no relation with the laser photo radiating surface or over the back surface, and the radiating surface 4 is kept clean without direct contamination. |
| 公开日期 | 1985-04-12 |
| 申请日期 | 1984-07-27 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/84936]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | HITACHI SEISAKUSHO KK |
| 推荐引用方式 GB/T 7714 | KOBAYASHI MASAYOSHI,HIRAO MOTONAO,AIKI KUNIO. Semiconductor light emitting device. JP1985063981A. 1985-04-12. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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