Liquid-phase epitaxial growth equipment
文献类型：专利
| 作者 | KUME ICHIRO; TANAKA TOSHIO |
| 发表日期 | 1986-04-16 |
| 专利号 | JP1986074331A |
| 著作权人 | MITSUBISHI ELECTRIC CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Liquid-phase epitaxial growth equipment |
| 英文摘要 | PURPOSE:To obtain the epitaxial layer of good quality by a method wherein gratings are provided at the bottom parts of liquid solution reservoirs, and the impurities such as an oxide and the like in the liquid solution are removed. CONSTITUTION: Gratings 9 are provided at the bottom part of each vessel of a liquid solution reservoir 7. As a result, the liquid solution passes through the gratings 9 when it is injected, the impurities such as the oxide of liquid solution material contained in the liquid solution, the aggregate of nuclei and the like grown in the liquid solution in supersaturated condiction are trapped by the gratings. Consequently, an epitaxial layer which is more uniform than the conventional one can be obtained. |
| 公开日期 | 1986-04-16 |
| 申请日期 | 1984-09-19 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/84945]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MITSUBISHI ELECTRIC CORP |
| 推荐引用方式 GB/T 7714 | KUME ICHIRO,TANAKA TOSHIO. Liquid-phase epitaxial growth equipment. JP1986074331A. 1986-04-16. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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