Bragg reflection type laser and manufacture thereof
文献类型：专利
| 作者 | HIRATA TAKAAKI |
| 发表日期 | 1990-03-07 |
| 专利号 | JP1990066984A |
| 著作权人 | HIKARI KEISOKU GIJUTSU KAIHATSU KK |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Bragg reflection type laser and manufacture thereof |
| 英文摘要 | PURPOSE:To enhance the coupling efficiency between an active region and a Bragg region and to decrease a waveguide loss in the Bragg reflection region by incorporating a layer wherein the extending part of a quantum well structure is disorganized as a waveguide layer in the Bragg reflection region. CONSTITUTION:The parts of a cap layer 5 and a clad layer 4 other than an active region are etched. Thereafter, ions are implanted into the part other than the active region, and heat treatment is performed. In this way, a quantum well layer 3 in the ion implanted region is broken. A wave pattern 6 whose crests cross the longitudinal direction of the active region is formed at the exposed part of the clad Iayer 4. Then, the region along the light outputting direction in the active region is made to remain, and the wave pattern 6 is etched. This element is provided with the following regions: the region wherein a quantum well structure is provided, i.e., the region wherein the cap Iayer 5 is provided; and the Bragg reflection region wherein the light having the specified wavelength that is incorporated in the output light from the active region, i.e., the region wherein the wave pattern 6 is provided. The Bragg reflection region includes a layer wherein the extending part of the quantum well structure is disorganized as a waveguide layer 3'. |
| 公开日期 | 1990-03-07 |
| 申请日期 | 1988-08-31 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/84951]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | HIKARI KEISOKU GIJUTSU KAIHATSU KK |
| 推荐引用方式 GB/T 7714 | HIRATA TAKAAKI. Bragg reflection type laser and manufacture thereof. JP1990066984A. 1990-03-07. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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