Optical integrated element
文献类型：专利
| 作者 | MURATA SHIGERU; KATOU YOSHITAKE |
| 发表日期 | 1988-12-20 |
| 专利号 | JP1988311786A |
| 著作权人 | NEC CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Optical integrated element |
| 英文摘要 | PURPOSE:To improve a coupling efficiency between a distributed feedback laser and an optical element and provide sufficient electrical isolation by a method wherein the coupling part and the channel part of the distributed feedback laser are filled with high resistance semiconductor which is transparent at the oscillation frequency of the laser. CONSTITUTION:The channel part 140 and the coupling part 120 of a distributed feedback laser (DFB laser) 110 are filled with high resistance semiconductor 107 and a light guide layer 102 is formed over a whole device. The high resistance semiconductor 107 has the same composition as the cladding layer 105 (but a higher resistivity than the cladding layer 105) and hence is transparent for a laser beam and the laser beam is scattered very little in the coupling part 120 and sufficient electrical isolation can be provided. Moreover, as the channel part 140 of the DFB laser 110 is also filled with the high resistance semiconductor 107, a lateral mode can be stabilized and a current can be suppressed to a low level so that the laser with a low threshold and a high efficiency can be obtained. It is to be noted that the DFB laser 110 has a so- called strip buried hetero structure (SBH structure). |
| 公开日期 | 1988-12-20 |
| 申请日期 | 1987-06-12 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/84952]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | NEC CORP |
| 推荐引用方式 GB/T 7714 | MURATA SHIGERU,KATOU YOSHITAKE. Optical integrated element. JP1988311786A. 1988-12-20. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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