Manufacture of semiconductor laser device
文献类型：专利
| 作者 | WADA MASARU; ITOU KUNIO; HAMADA TAKESHI; SHIMIZU YUUICHI; SUGINO TAKASHI |
| 发表日期 | 1985-10-25 |
| 专利号 | JP1985213073A |
| 著作权人 | MATSUSHITA ELECTRIC IND CO LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Manufacture of semiconductor laser device |
| 英文摘要 | PURPOSE:To obtain a vertical flat cavity surface by forming a GaAlAs layer on a cap layer, shaping a mask with an opening end in the direction on the GaAlAs layer and forming the cavity surface through etching through an opening section. CONSTITUTION:An N type GaAlAs clad layer 2, a GaAs active layer 3, a P type GaAlAs clad layer 4 and a P type GaAs cap layer 5 are grown continuously on a (100)GaAs substrate A fifth Ga1-yAlyAs layer 7 is shaped on the P type GaAs cap layer 5, and a striped photo-mask 6 is formed on the layer 7 in the direction. Sections up to the GaAs substrate 1 are etched through the mask. Consequently, the end surfaces of the P type GaAs cap layer 5 are already vertical, and verticality up to the substrate is maintained. The GaAlAs layer 7 is removed selectively, and a positive electrode 8 is formed on the exposed P type GaAs cap layer 5 and a negative electrode 9 on the substrate side. Etching is broken at the positions of etched grooves, thus obtaining a semiconductor laser element. |
| 公开日期 | 1985-10-25 |
| 申请日期 | 1984-04-06 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/84963]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MATSUSHITA ELECTRIC IND CO LTD |
| 推荐引用方式 GB/T 7714 | WADA MASARU,ITOU KUNIO,HAMADA TAKESHI,et al. Manufacture of semiconductor laser device. JP1985213073A. 1985-10-25. |
入库方式： OAI收割
来源：西安光学精密机械研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。