光半導体素子
文献类型：专利
| 作者 | 松井 輝仁; 大塚 健一; 杉本 博司; 阿部 雄次 |
| 发表日期 | 1997-04-25 |
| 专利号 | JP2633234B2 |
| 著作权人 | 三菱電機株式会社 |
| 国家 | 日本 |
| 文献子类 | 授权发明 |
| 其他题名 | 光半導体素子 |
| 英文摘要 | PURPOSE:To obtain a device comprising a single substrate carrying integrally thereon a 3-5 mum-wavelength light-emitting element, an optical waveguide layer and a photo detector by forming an impurity diffused region in an InGaAs optical absorption layer formed such as in an inclined plane at the end of the InGaAsP optical waveguide layer formed on the InP substrate. CONSTITUTION:An InGaAsP optical waveguide layer 12 is formed on an InP substrate 11 and an InGaAs optical absorption layer 14 which has a smaller forbidden bandwidth than that of the optical waveguide layer 12 is formed in an inclined plane or vertically as required at the end of the InGaAsP optical waveguide layer 12. Further, an impurity diffused region 16 is formed at least in the InGaAs optical absorption layer 14 and the optical waveguide layer 12 and the optical absorption layer 14 are integrally formed monolithically on the InP substrate 1 For example, the InGaAsP layer 12 and an n-InP layer 13 are grown on the semi-insulating InP substrate 11 and after removing the one end of each layer 12, 13 by etching to make an inclined end plane, the low carrier concentration InGaAs layer 14 and an n-InP layer 15 are grown and then, the p-region 16 is formed by thermally diffusing Zn or Cd. |
| 公开日期 | 1997-07-23 |
| 申请日期 | 1986-07-04 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/84968]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | 三菱電機株式会社 |
| 推荐引用方式 GB/T 7714 | 松井 輝仁,大塚 健一,杉本 博司,等. 光半導体素子. JP2633234B2. 1997-04-25. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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