Semiconductor laser and manufacture thereof
文献类型：专利
| 作者 | OSHIMA HIROYUKI |
| 发表日期 | 1987-08-06 |
| 专利号 | JP1987179787A |
| 著作权人 | SEIKO EPSON CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser and manufacture thereof |
| 英文摘要 | PURPOSE:To form a current constriction layer during continuously epitaxy without exposing with the atmosphere by composing an N-type clad layer and a P-type clad layer in a stripe shape, forming both sides of the stripe in a layer of conductivity type opposite to that of each layer, and forming a planar structure. CONSTITUTION:A buried layer 202 is formed on an N-type substrate 201, an N-type clad layer 203, an active layer 204, and a P-type clad layer 205 are formed in a stripe shape thereon as a double hetero structure. A layer of conductivity type opposite to that of each layer, i.e., P-type AlGaAs layer 207 and an N-type AlGaAs layer 209 are formed on both sides of the stripe. They are all formed in a planar shape by organic metal chemical vapor growth for selectively emitting light. Then, a cap layer 206 is formed on the upper end, and an ohmic contact is obtained by a P-type electrode 210 and an N-type electrode 21 Thus, a current construction layer can be formed by continuous epitaxial growth without exposing it to the atmosphere. |
| 公开日期 | 1987-08-06 |
| 申请日期 | 1986-02-03 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/84981]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | SEIKO EPSON CORP |
| 推荐引用方式 GB/T 7714 | OSHIMA HIROYUKI. Semiconductor laser and manufacture thereof. JP1987179787A. 1987-08-06. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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