Semiconductor light-emitting element
文献类型：专利
| 作者 | USHIJIMA ICHIROU; KOMIYAMA TAKESHI; TANAHASHI TOSHIYUKI |
| 发表日期 | 1982-11-06 |
| 专利号 | JP1982180192A |
| 著作权人 | FUJITSU KK |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor light-emitting element |
| 英文摘要 | PURPOSE:To obtain the buried type light-emitting element of low threshold value in lateral mode by a method wherein the forbidden bandwidth of an InGaAsP clad layer, to be buried in the V-groove of an InP substrate, is formed larger than that of an InGaAsP active layer. CONSTITUTION:A PInP 2 is grown on the (100) surface of an NInP 1, an SiO2 mask is attached in[01(-1)]direction using sputtering method, a V-groove is formed by performing an etching using Br2CH4OH solution. A clad layer is formed by removing the SiO2 mask, and when an NInGaAsP 3 with the forbidden bandwidth larger than that of the active layer, to be grown subsequently, has been grown in liquid-phase, a layer 3 is formed thickly in the V-groove and thinly on the plane (100) surface outside the V-groove. Subsequently, an InGaAsP active layer 4, a PInP layer 5, and a PInGaAsP connecting layer 6 are successively deposited, and then electrodes 7 and 8 are attached. According to this constitution, the semiconductor light-emitting element of stabilized lateral mode in low threshold value can be obtained with excellent reproduciblity. |
| 公开日期 | 1982-11-06 |
| 申请日期 | 1981-04-30 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/84982]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | FUJITSU KK |
| 推荐引用方式 GB/T 7714 | USHIJIMA ICHIROU,KOMIYAMA TAKESHI,TANAHASHI TOSHIYUKI. Semiconductor light-emitting element. JP1982180192A. 1982-11-06. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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