Light-emitting diode with a narrow beam divergence based on the effect of photonic band crystal-mediated filtration of high-order optical modes
文献类型：专利
| 作者 | LEDENTSOV, NIKOLAI; SHCHUKIN, VITALY |
| 发表日期 | 2007-04-26 |
| 专利号 | US20070091953A1 |
| 著作权人 | P.B.C. LASERS, LTD |
| 国家 | 美国 |
| 文献子类 | 发明申请 |
| 其他题名 | Light-emitting diode with a narrow beam divergence based on the effect of photonic band crystal-mediated filtration of high-order optical modes |
| 英文摘要 | A semiconductor light-emitting diode having a low beam divergence includes at least one waveguide comprising an active region generating light by injection of a current, a photonic band crystal having the refractive index modulation in the direction perpendicular to the propagation of the emitted light, and at least one optical defect. The photonic band crystal and the optical defect are optimized such that the fundamental optical mode of the device is localized at the defect and decays away from the defect, while the other optical modes are extended over the photonic band crystal. The optical confinement factor of the localized optical mode preferably exceeds the optical confinement factor of the rest of the optical modes by at least a factor of three. |
| 公开日期 | 2007-04-26 |
| 申请日期 | 2006-10-13 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/84986]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | P.B.C. LASERS, LTD |
| 推荐引用方式 GB/T 7714 | LEDENTSOV, NIKOLAI,SHCHUKIN, VITALY. Light-emitting diode with a narrow beam divergence based on the effect of photonic band crystal-mediated filtration of high-order optical modes. US20070091953A1. 2007-04-26. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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