Buried structure semiconductor laser
文献类型：专利
| 作者 | KOIZUMI YOSHIHIRO |
| 发表日期 | 1989-12-19 |
| 专利号 | JP1989313982A |
| 著作权人 | NEC CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Buried structure semiconductor laser |
| 英文摘要 | PURPOSE:To improve the yield of acceptable elements by arranging an N-type gallium indium arsenic phosphorus layer on an iron doping indium phosphorus layer by doping an active layer so as to be an N-type. CONSTITUTION:After a stripe-type SiO2 mask is formed in the direction of on the (100) face of a sulfur doping N-type indium phosphorus substrate 11, a trapezoidal mesa having a side-wall of (111) B face 17 is formed by etching with mixed solution of hydrochloric acid and phosphoric acid. While the SiO2 etching mask is left, an iron doping indium phosphorus layer 12 is epitaxially grown. After the SiO2 etching mask on the upper part of the trapezoidal mesa is eliminated, lattice defect and the like are eliminated by in situ hydrochloric acid etching. Then a sulfur doping N-type gallium indium arsenic phosphorus active layer 13 is grown. Thereby the yield of acceptable elements is improved. |
| 公开日期 | 1989-12-19 |
| 申请日期 | 1988-06-13 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/84988]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | NEC CORP |
| 推荐引用方式 GB/T 7714 | KOIZUMI YOSHIHIRO. Buried structure semiconductor laser. JP1989313982A. 1989-12-19. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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