Semiconductor laser device
文献类型：专利
| 作者 | ITO KIYOSHI |
| 发表日期 | 1992-08-25 |
| 专利号 | JP1992237179A |
| 著作权人 | NEC CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser device |
| 英文摘要 | PURPOSE:To provide a semiconductor laser for high-speed operation by eliminating wire bonding to avoid parasitic inductance ascribed to fine bonding wire. CONSTITUTION:A stepped part is provided to the side of a semiconductor laser pellet on its epitaxial layer side so as to come into contact with a substrate, an electrode is provided to the exposed part of the substrate and the surface of the epitaxial growth layer respectively, and the P electrode and the N electrode of the semiconductor laser pellet are connected to two electrodes provided to a heat sink provided with a stepped part as high as that of the semiconductor pellet to enable a semiconductor laser of this design to operate at a high speed. |
| 公开日期 | 1992-08-25 |
| 申请日期 | 1991-01-22 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/84990]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | NEC CORP |
| 推荐引用方式 GB/T 7714 | ITO KIYOSHI. Semiconductor laser device. JP1992237179A. 1992-08-25. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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