Terraced substrate semiconductor laser
文献类型：专利
| 作者 | ITOH, KUNIO; SUGINO, TAKASHI; WADA, MASARU; SHIMIZU, HIROKAZU |
| 发表日期 | 1983-07-05 |
| 专利号 | US4392227 |
| 著作权人 | MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD., A CORP. OF JAPAN |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Terraced substrate semiconductor laser |
| 英文摘要 | In a terraced substrate type semiconductor laser comprising a semiconductor substrate (11) having a step (T) on its principal face, an active layer (13) with an oblique central region (131), defined between two bendings, as stripe-shaped lasing region near the foot of the step part (T) of the substrate (11), and a clad layer (14) formed on the active layer (13), The device is characterized by comprising a current injection region (22) which is formed by diffusing an impurity, in a manner that a diffusion front corner (221) penetrate the clad layer (14) and contacts the oblique lasing region (131) thereby to form the current injection path (221) very narrow and closely to the central part of the stripe-shaped lasing region (13), thereby effectively confining the injected current to the lasing region (131) and hence attaining very low threshold current and very high external differential quantum efficiency. |
| 公开日期 | 1983-07-05 |
| 申请日期 | 1981-01-13 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/84997]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD., A CORP. OF JAPAN |
| 推荐引用方式 GB/T 7714 | ITOH, KUNIO,SUGINO, TAKASHI,WADA, MASARU,et al. Terraced substrate semiconductor laser. US4392227. 1983-07-05. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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