Semiconductor laser device
文献类型：专利
| 作者 | TANAKA TOSHIO; KUME ICHIRO; NARA AIICHIRO |
| 发表日期 | 1989-07-31 |
| 专利号 | JP1989189983A |
| 著作权人 | MITSUBISHI ELECTRIC CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser device |
| 英文摘要 | PURPOSE:To obtain fundamental transverse mode oscillation up to a high-current region at a low threshold by forming AlGaAs growth block layers for AlGaAs layers on both sides that shape an active region and bending an active region section in an active layer. CONSTITUTION:An active layer 4 is bent on a current inrush region to a V-shaped etching section 7 by an AlGaAs growth block layer 1 Consequently, inrush currents concentrically flow only into a bent active region 8, and both sides of the active region 8 are also held by an N-type AlGaAs upper clad layer 5 having a small refractive index, and the effect of current confinement in the lateral direction and light is also displayed. Since the forbidden band zone of the AlGaAs growth block layer 11 is widened, the layer 11 also functions as a current block layer effectively. Accordingly, light and currents are confined effectually by the active region 8, thus acquiring a laser having a fundamental transfers mode stable up to a high current inrush region by low threshold currents. |
| 公开日期 | 1989-07-31 |
| 申请日期 | 1988-01-26 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/84999]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MITSUBISHI ELECTRIC CORP |
| 推荐引用方式 GB/T 7714 | TANAKA TOSHIO,KUME ICHIRO,NARA AIICHIRO. Semiconductor laser device. JP1989189983A. 1989-07-31. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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