Semiconductor laser
文献类型：专利
| 作者 | YAMABAYASHI YOSHIAKI; ITAYA YOSHIO |
| 发表日期 | 1986-09-27 |
| 专利号 | JP1986218194A |
| 著作权人 | NIPPON TELEGRAPH & TELEPHONE |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser |
| 英文摘要 | PURPOSE:To omit the wiring connecting a semiconductor laser element and the last step of a drive circuit by controlling the current flowing in a current supply layer by using the semiconductor layer formed in a current constriction layer or the current supply layer as a gate. CONSTITUTION:In a clad layer 6, the part in contact with an active layer 2 is constituted as a drain or source electrode and the part distant from the active layer is constituted as a source or drain electrode. A current constriction layer 4 of a semiconductor laser element is also used as a gate of a field effect transistor and the current from the active layer 2 to the clad layer 6 is controlled by a voltage of the current constriction layer 4. Otherwise, the semiconductor layer of the same conductive type as the current constriction layer which is formed on the current supply layer is used as a gate of a field effect transistor and the current of the current supply layer between this semiconductor layer and the current constriction layer is controlled. |
| 公开日期 | 1986-09-27 |
| 申请日期 | 1985-03-23 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/85000]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | NIPPON TELEGRAPH & TELEPHONE |
| 推荐引用方式 GB/T 7714 | YAMABAYASHI YOSHIAKI,ITAYA YOSHIO. Semiconductor laser. JP1986218194A. 1986-09-27. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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