Semiconductor laser
文献类型：专利
| 作者 | KAGAWA HITOSHI; HATTORI AKIRA |
| 发表日期 | 1988-08-04 |
| 专利号 | JP1988188984A |
| 著作权人 | MITSUBISHI ELECTRIC CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser |
| 英文摘要 | PURPOSE:To have a semiconductor laser through which a high S/N ratio is stably obtained for an extensive light return rate by establishing reflectivity at a laser outgoing beam end face of a resonator in the ratio of 21%+ or -3%. CONSTITUTION:Reflectivity at a laser outgoing beam end face is optionally established within the extent of 21%+ or -3% with an end face protecting film. A light return rate is so different according to a state of using that its characteristic eliminates the need for improving an S/N ratio by changing coating reflectivity of a laser outgoing end face, that is, by changing the material quality or the film thickness of the end face protecting film at the laser outgoing beam end face and a stable high S/N ratio is always obtained by applying its characteristic even to optical systems of a variety of optical disk systems where a light return rate vary extensively. |
| 公开日期 | 1988-08-04 |
| 申请日期 | 1987-01-30 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/85006]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MITSUBISHI ELECTRIC CORP |
| 推荐引用方式 GB/T 7714 | KAGAWA HITOSHI,HATTORI AKIRA. Semiconductor laser. JP1988188984A. 1988-08-04. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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