Semiconductor laser element
文献类型：专利
| 作者 | TANAKA TOSHIAKI; MINAGAWA SHIGEKAZU; KAJIMURA TAKASHI |
| 发表日期 | 1989-09-22 |
| 专利号 | JP1989238085A |
| 著作权人 | HITACHI LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser element |
| 英文摘要 | PURPOSE:To achieve highly uniform etching with high accuracy, by using an AlGaAs crystal as an etching stop layer with respect to an etchant of an AlGaInP crystal. CONSTITUTION:An SiO2 insulation film is formed to form a ridge optical waveguide stripe and the film is patterned into the form of a stripe. Using this film as a mask, first of all, a p-type GaAs cap layer 8 is etched. The etchant of a GaAs crystal is used and the above layer is treated to have an SiO2 insulation film stripe width. Further, the ridge optical waveguide stripe having a forward mesa form is made by treating a p-type (AlxGa1-x)0.51In0.49P clad layer 7 through etching by using a selective etchant of an AlGaInP crystal. In such a case, the etching treatment of the foregoing clad layer 7 is controlled by a p-type AlzGa1-zAs etching stop layer 6. |
| 公开日期 | 1989-09-22 |
| 申请日期 | 1988-03-18 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/85012]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | HITACHI LTD |
| 推荐引用方式 GB/T 7714 | TANAKA TOSHIAKI,MINAGAWA SHIGEKAZU,KAJIMURA TAKASHI. Semiconductor laser element. JP1989238085A. 1989-09-22. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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