Semiconductor element
文献类型：专利
| 作者 | WATABE SHINICHI; TADATOMO KAZUYUKI; SUKEGAWA TOKUZO |
| 发表日期 | 1992-12-04 |
| 专利号 | JP1992350976A |
| 著作权人 | SUKEGAWA TOKUZO |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor element |
| 英文摘要 | PURPOSE:To enhance the brightness in light-emission by a method wherein GaP is used for a substrate and GaInP is used for an active layer. CONSTITUTION:An active layer 4 which uses GaInP as a main component is formed on a substrate 1 which uses GaP as a main component. Since GaP can be grown as a bulk crystal, it can be used for the substrate Since the band gap of GaP is larger than that of GaInP, the GaP is provided with a function as a clad layer 5. In addition, the GaP is transparent with reference to light which is emitted from the active layer 4. Consequently, when the GaP is used for the substrate 1 and the GaInP is used for the active layer 2, radiated light is not absorbed by the substrate As a result, the brightness of a light- emitting operation is enhanced. |
| 公开日期 | 1992-12-04 |
| 申请日期 | 1991-05-28 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/85014]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | SUKEGAWA TOKUZO |
| 推荐引用方式 GB/T 7714 | WATABE SHINICHI,TADATOMO KAZUYUKI,SUKEGAWA TOKUZO. Semiconductor element. JP1992350976A. 1992-12-04. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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