Semiconductor laser with a weakly coupled grating
文献类型：专利
| 作者 | REITHMAIER, JOHANN PETER; BACH, LARS |
| 发表日期 | 2009-05-07 |
| 专利号 | US20090117678A1 |
| 著作权人 | NANOPLUS GMBH |
| 国家 | 美国 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser with a weakly coupled grating |
| 英文摘要 | A semiconductor laser with a semiconductor substrate, a laser layer arranged on the semiconductor substrate, a waveguide arranged parallel to the laser layer and a strip shaped grating structure is disclosed. The laser layer, the waveguide and the grating are arranged in a configuration which results in weak coupling between the laser light and the grating structure, so that the laser light interacts with an increased number of grating elements. A process for the production of such a semiconductor laser is also disclosed. |
| 公开日期 | 2009-05-07 |
| 申请日期 | 2008-11-05 |
| 状态 | 授权 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/85015]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | NANOPLUS GMBH |
| 推荐引用方式 GB/T 7714 | REITHMAIER, JOHANN PETER,BACH, LARS. Semiconductor laser with a weakly coupled grating. US20090117678A1. 2009-05-07. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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