Semiconductor laser
文献类型：专利
| 作者 | KOMAZAKI IWAO |
| 发表日期 | 1992-12-25 |
| 专利号 | JP1992372185A |
| 著作权人 | OLYMPUS OPTICAL CO LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser |
| 英文摘要 | PURPOSE:To obtain a semiconductor laser exhibiting low noise for return light of transverse fundamental-mode oscillation impinging on the surface of a wafer. CONSTITUTION:A quantum well active layer 23 formed onto a compound semiconductor substrate 21 through a first clad layer 22 and a mesa-Shaped second clad layer 24 formed onto the active layer are provided. In a semiconductor laser, the second clad layer has self-alignment type double-hetero structure, in which a current block layer 30 is buried, a first grating 27 is shaped in the direction of a resonator in the base section of the mesa-shaped second clad layer, a second grating 28 is formed at a top section near an end face on the output side, and a high reflecting film 33 is formed on the other end face. |
| 公开日期 | 1992-12-25 |
| 申请日期 | 1991-06-21 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/85018]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | OLYMPUS OPTICAL CO LTD |
| 推荐引用方式 GB/T 7714 | KOMAZAKI IWAO. Semiconductor laser. JP1992372185A. 1992-12-25. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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