半導体レ—ザ
文献类型：专利
| 作者 | 五明 明子 |
| 发表日期 | 1996-06-14 |
| 专利号 | JP2527024B2 |
| 著作权人 | 日本電気株式会社 |
| 国家 | 日本 |
| 文献子类 | 授权发明 |
| 其他题名 | 半導体レ—ザ |
| 英文摘要 | PURPOSE:To prevent deterioration of end faces due to light absorption and damage thereof and thereby to attain high reliability and high output by a method wherein the end faces in the opposite ends of an active layer formed on a (001) plane are covered with a crystal in the same composition with the active layer by growth onto a plane equivalent to a (110) plane. CONSTITUTION:An n-type (Al0.4Ga0.6)0.5In0.5P clad layer 2, a Ga0.5In0.5P active layer 3, a p-type (Al0.4Ga0.6)0.5In0.5P clad layer 4 and a P type GaAs cap layer 5 are made to grow sequentially on a GaAs substrate 1 on a (001) plane. Thereafter a p-type electrode 6 is formed on the GaAs contact layer 5 and an n-type electrode 7 on the substrate 1 side. Cleavage is made so that the total length of a resonator be a prescribed length, and a Ga0.5In0.5P layer 8 is made to grow on a (110) plane of a cleavage plane or on a (-110) plane so that it covers the active layer 3 at least. This plane of growth is made to be an emission end face 9 of a semiconductor laser light. A semiconductor laser thus obtained is improved in reliability by reduction of deterioration of the end face, while optical breakdown of the end face is prevented, and thus a maximum light output can be improved. |
| 公开日期 | 1996-08-21 |
| 申请日期 | 1989-02-13 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/85023]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | 日本電気株式会社 |
| 推荐引用方式 GB/T 7714 | 五明 明子. 半導体レ—ザ. JP2527024B2. 1996-06-14. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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