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文献类型：专利
| 作者 | KAJIMURA TAKASHI; SAITO KAZUTOSHI; SHIGE NORYUKI; NAKAMURA MICHIHARU; UMEDA JUNICHI; KOBAYASHI MASAYOSHI |
| 发表日期 | 1984-10-24 |
| 专利号 | JP1984043839B2 |
| 著作权人 | HITACHI LTD |
| 国家 | 日本 |
| 文献子类 | 授权发明 |
| 其他题名 | - |
| 英文摘要 | PURPOSE:To obtain a laser luminous flux having excellent parallelism and small beam diverging angle by interposing an extremely thin active layer with semiconductor layers having refractive index smaller than that of the active layer and burying them in a semiconductor having larger forbidden band width then the active layer and larger refractive index than the semiconductors disposed at both sides of the active layer. CONSTITUTION:An N type AlyGa1-yAs layer 2', an undoped AlxGa1-xAs acitve layer 1 and a P type AlyGa1-yAs layer 2 are sequentially laminated on an N type GaAs substrate 4, are epitaxially grown in liquid phase, and with an SiO film as a mask they are selectively etched to form the layer 1 interposed between the layers 2 and 2' in a stripe shape. Then, the stripe region is surrounded by Al2Ga1-zAs layer 3, the entire region is covered with Al2O3 film 5 and phosphorus silicate glass film 6, a hole is formed on the striped region, an ohmic electrode 8 extending on the film 6 is covered in contact with the layer 2, and an electrode 7 is mounted on the back surface of the substrate 4. In the structure the refractive indexes of the layers 1,2 and 2',3 are n2, n2' |
| 公开日期 | 1984-10-24 |
| 申请日期 | 1981-09-09 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/85033]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | HITACHI LTD |
| 推荐引用方式 GB/T 7714 | KAJIMURA TAKASHI,SAITO KAZUTOSHI,SHIGE NORYUKI,et al. -. JP1984043839B2. 1984-10-24. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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