Semiconductor laser
文献类型：专利
| 作者 | KATSUTA HIROHIKO; OSANAI YUTAKA |
| 发表日期 | 1987-12-21 |
| 专利号 | JP1987293686A |
| 著作权人 | FUJIKURA LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser |
| 英文摘要 | PURPOSE:To improve the coupling efficiency between an active layer and an external waveguide layer and to eliminate the effect of damage at an end surface to an active part, by wrapping the active part, which is formed by the active layer and a diffraction grating surface by the external waveguide layer. CONSTITUTION:A diffraction grating surface 2 is formed at the central part of the upper surface of a substrate 1 by etching. A first clad layer 3, an active layer 4 and a depression layer 5 are sequentially grown thereon by an epitaxial method. Then, both side parts of the layers 3, 4 and 5 are etched, and an active part 7 is formed. Thereafter, an external waveguide layer 6, and a second clad layer 8 are sequentially grown. Then, a mesa stripe structure is formed in the optical axis direction (right and left direction). When the mesa stripe structure is embedded, a stripe laser is obtained. |
| 公开日期 | 1987-12-21 |
| 申请日期 | 1986-06-12 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/85037]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | FUJIKURA LTD |
| 推荐引用方式 GB/T 7714 | KATSUTA HIROHIKO,OSANAI YUTAKA. Semiconductor laser. JP1987293686A. 1987-12-21. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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