Semiconductor laser device
文献类型：专利
| 作者 | GOTODA, MITSUNOBU |
| 发表日期 | 2003-11-04 |
| 专利号 | US6643309 |
| 著作权人 | MITSUBISHI DENKI KABUSHIKI KAISHA |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Semiconductor laser device |
| 英文摘要 | A high performance single-wavelength semiconductor laser device having stable and high-speed operation includes an active region, a forward light reflection region located in front of the active region, a backward light reflection region located behind the active region, and a phase control region located in proximity to the active layer, all sandwiched between an upper cladding layer and a lower cladding layer. The forward light reflection region and the backward light reflection region include alternate diffraction grating portions and non-diffracting portions alternately. The laser oscillates at a wavelength which corresponds to the current flowing in the diffraction grating portion. A current blocking layer is located on the non-diffracting portion of at least one of the forward light reflection region and the backward light reflection region for blocking current from flowing into the non-diffracting portion. |
| 公开日期 | 2003-11-04 |
| 申请日期 | 2002-02-14 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/85039]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MITSUBISHI DENKI KABUSHIKI KAISHA |
| 推荐引用方式 GB/T 7714 | GOTODA, MITSUNOBU. Semiconductor laser device. US6643309. 2003-11-04. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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