半導体レーザ装置及びその製造方法
文献类型：专利
| 作者 | 波多腰 玄一; 板谷 和彦; 西川 幸江; 鈴木 真理子; 新田 康一; 岡島 正季 |
| 发表日期 | 1999-06-11 |
| 专利号 | JP2938198B2 |
| 著作权人 | 株式会社東芝 |
| 国家 | 日本 |
| 文献子类 | 授权发明 |
| 其他题名 | 半導体レーザ装置及びその製造方法 |
| 英文摘要 | PURPOSE:To provide a window-structure semiconductor laser device, of refractive-index waveguide type, which can be manufactured by a simple process. CONSTITUTION:The title laser device is composed of the following: a double heterostructure part in which an active layer has been sandwiched between an n-type clad layer and a p-type clad layer a first region which is formed on the p-type clad layer and in which a beam-radiant edge part has been removed in a stripe-shaped region in the direction of a resonator; and an n-type semiconductor layer in which an opening has been formed in second regions formed so as to sandwich the stripe-shaped region on the beam-radiant edge part. An effective refractive index in a third region sandwiched between the second regions is higher than that of the second regions; a band gap in the region of the active layer under the third region is larger than that under the first region. Since a waveguide structure and a window structure can be formed by two crystal growth operations, it is possible to realize a window-structure semiconductor laser, of refractive-index waveguide type, which can be manufactured by a simple process. |
| 公开日期 | 1999-08-23 |
| 申请日期 | 1991-01-24 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/85042]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | 株式会社東芝 |
| 推荐引用方式 GB/T 7714 | 波多腰 玄一,板谷 和彦,西川 幸江,等. 半導体レーザ装置及びその製造方法. JP2938198B2. 1999-06-11. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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