Semiconductor laser array
文献类型：专利
| 作者 | UCHIDA TEIJI; KOBAYASHI ISAO |
| 发表日期 | 1985-12-02 |
| 专利号 | JP1985242686A |
| 著作权人 | NIPPON DENKI KK |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser array |
| 英文摘要 | PURPOSE:To reduce man-hours on manufacture, and to obtain a semiconductor laser array, which has high yield on the manufacture of an element and enables single wavelength oscillation, by forming a line tying the apices of the periodic structure of diffraction gratings in each stripe in one part of a curve. CONSTITUTION:Diffraction gratings 100 consisting of the circular arcs of concentric circles having a 4,000Angstrom period and a 18mm. radius are formed on an N-InP substrate 1, and buried crystal growth functioning as the formation of parallel grooves and the formation of current confinement structure in combination is conducted to a double hetero-junction wafer in which an N-InGaAsP optical waveguide layer 2 having a 15mum compositional wavelength, an InGaAsP active layer 3 having a 30mum compositional wavelength and a P-InP clad layer 4 are shaped through a liquid phase growth method, thus manufacturing semiconductor lasers 11, 12, 13. Accordingly, a semiconductor laser array, wavelengths thereof differ little by little through the formation of the diffraction gratings only by one-time process, can be integrated. |
| 公开日期 | 1985-12-02 |
| 申请日期 | 1984-05-17 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/85051]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | NIPPON DENKI KK |
| 推荐引用方式 GB/T 7714 | UCHIDA TEIJI,KOBAYASHI ISAO. Semiconductor laser array. JP1985242686A. 1985-12-02. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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