Manufacture of semiconductor device
文献类型：专利
| 作者 | KISHINO KATSUMI; TAKOU TOSHIHARU |
| 发表日期 | 1984-10-19 |
| 专利号 | JP1984184580A |
| 著作权人 | TOKYO KOGYO DAIGAKUCHO |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Manufacture of semiconductor device |
| 英文摘要 | PURPOSE:To improve the yield by removing one process of diffusion or crystal growth accompanied with accurate control and complicated operation by a method wherein a scribe type semiconductor laser is manufactured at a time of liquid phase epitaxial growth. CONSTITUTION:Etching is performed by providing a mask 21 on a GaAs substrate 11, thus forming a mesa structure 22. Thereafter, an N type AlGaAs layer 32 and a P type AlGaAs layer 12 serving as a current blocking layer are grown by liquid phase epitaxial growth. Thereat, the thickness of the grown layer at the center 23 of said layer 12 corresponding to the mesa structure 22 is grown more thinly than at the other part. Next, etching is performed in contact with the fused solution of Ga+As whose As component is unsaturated. The speed of etching is faster in the GaAs substrate 11 than in the AlGaAs layer 12, therefore the mesa structure 22 is scraped off, resulting in the formation of a groove 17. The surface of the groove 17 is flatted by growing an N type AlGaAs layer 13, further an AlGaAs layer 14 serving as an active layer is grown, successively an AlGaAs layer 15 and a GaAs layer 16 both of P type are grown, and electrodes 18 and 19 are mounted. |
| 公开日期 | 1984-10-19 |
| 申请日期 | 1983-04-04 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/85052]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | TOKYO KOGYO DAIGAKUCHO |
| 推荐引用方式 GB/T 7714 | KISHINO KATSUMI,TAKOU TOSHIHARU. Manufacture of semiconductor device. JP1984184580A. 1984-10-19. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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