中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Semiconductor device

文献类型:专利

作者KUSUKI SHIGEHIRO; SANO KAZUYA; BABA TAKAHISA
发表日期1990-02-22
专利号JP1990052484A
著作权人OKI ELECTRIC IND CO LTD
国家日本
文献子类发明申请
其他题名Semiconductor device
英文摘要PURPOSE:To obtain continuously constant photo detection efficiency by allowing a laser light for monitor emitted by a laser diode provided at a semiconductor substrate to incide a photo detector either directly or after being reflected by a light reflection member with the bottom surface itself of the semiconductor substrate as the photo detector. CONSTITUTION:A light reflection prevention film is coated on the surface of a photo detector 3 forming a bottom surface 2a of a recessed part 2 formed on the upper surface of an Si substrate 1 and a vertical part 4a where an electrode 4 is coated on a side surface 2b of the recessed part 2 plays a role as a light reflection member. Then, a laser diode (LD chip) 5 mounted on an LD drive electrode 6 at the edge part of the Si substrate 1, a laser light L1 irradiated from the LD chip 5 to the outside becomes the laser light for output, and a laser light L2 irradiated to a photo detector 3 side becomes the laser light for monitor. This laser light L2 for monitor incides the photo detector 3 either directly or being reflected by a vertical part 4a of an electrode 4 from an LD chip 5. Photo detection efficiency by the photo detector 4a is influenced only by the error at the mounting position of the LD chip 5 and scattering of value of signal for detecting the quantity of light is small, thus making constant the characteristics for detecting the quantity of light between products.
公开日期1990-02-22
申请日期1988-08-16
状态失效
源URL[http://ir.opt.ac.cn/handle/181661/85053]  
专题半导体激光器专利数据库
作者单位OKI ELECTRIC IND CO LTD
推荐引用方式
GB/T 7714
KUSUKI SHIGEHIRO,SANO KAZUYA,BABA TAKAHISA. Semiconductor device. JP1990052484A. 1990-02-22.

入库方式: OAI收割

来源:西安光学精密机械研究所

浏览0
下载0
收藏0
其他版本

除非特别说明,本系统中所有内容都受版权保护,并保留所有权利。