Formation method of compound semiconductor layer
文献类型：专利
| 作者 | HATA TOSHIO; KANEIWA SHINJI; KONDO MASAFUMI; HOSOBANE HIROYUKI; SUYAMA NAOHIRO; MATSUI KANEKI |
| 发表日期 | 1992-09-02 |
| 专利号 | JP1992245417A |
| 著作权人 | SHARP CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Formation method of compound semiconductor layer |
| 英文摘要 | PURPOSE:To obtain the formation method, of a compound semiconductor layer, which prevents that a part whose evaporation is not essential is evaporated, which maintains a stripe-groove shape formed on the face of a wafer, which obtains a uniform element characteristic and which can design the heating temperature of the wafer for evaporation use so as to be comparatively low at a molecular beam epitaxial(MBE) growth process and to obtain the manufacturing method of a semiconductor laser. CONSTITUTION:A reevaporation layer is constituted of a layer whose vapor pressure is comparatively high at a process to execute a regrowth operation after a reevaporation operation has been used at an MBE method. |
| 公开日期 | 1992-09-02 |
| 申请日期 | 1991-01-31 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/85055]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | SHARP CORP |
| 推荐引用方式 GB/T 7714 | HATA TOSHIO,KANEIWA SHINJI,KONDO MASAFUMI,et al. Formation method of compound semiconductor layer. JP1992245417A. 1992-09-02. |
入库方式： OAI收割
来源：西安光学精密机械研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。