Strained superlattice semiconductor structure
文献类型：专利
| 作者 | YOSHIDA, NAOHITO, C/O MITSUBISHI DENKI K.K. |
| 发表日期 | 1992-01-02 |
| 专利号 | EP0457571A3 |
| 著作权人 | MITSUBISHI DENKI KABUSHIKI KAISHA |
| 国家 | 欧洲专利局 |
| 文献子类 | 发明申请 |
| 其他题名 | Strained superlattice semiconductor structure |
| 英文摘要 | A semiconductor structure for a light-interactive semiconductor device includes first and second crystalline semiconductor cladding layers having a first lattice constant and a strained superlattice structure disposed in contact with and between the first and second cladding layers and including alternating first crystalline semiconductor quantum barrier layers having a first energy band gap and a second lattice constant and second crystalline semiconductor quantum well layers having a second energy band gap less than the first energy band gap and a third lattice constant wherein the first lattice constant is approximately equal to the average of the second and third lattice constants and the second lattice constant differs from the third lattice constant by at least about 0.5 percent of the second lattice constant. |
| 公开日期 | 1992-01-02 |
| 申请日期 | 1991-05-15 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/85057]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MITSUBISHI DENKI KABUSHIKI KAISHA |
| 推荐引用方式 GB/T 7714 | YOSHIDA, NAOHITO, C/O MITSUBISHI DENKI K.K.. Strained superlattice semiconductor structure. EP0457571A3. 1992-01-02. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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