Manufacture of semiconductor light emitting device
文献类型：专利
| 作者 | IWASAKI TAMOTSU; KASHIWA SUSUMU; MATSUO NOZOMI |
| 发表日期 | 1987-03-19 |
| 专利号 | JP1987062581A |
| 著作权人 | FURUKAWA ELECTRIC CO LTD:THE |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Manufacture of semiconductor light emitting device |
| 英文摘要 | PURPOSE:To improve the mass productivity and film thickness controllability by forming and etching a dielectric pattern of special width or diameter on a III-V compound semiconductor having double hetero structure, and growing III-V compound on the etched portion by reduced pressure vapor-phase epitaxy. CONSTITUTION:An N-type GaAs buffer layer 3, an N-type Al0.3Ga0.7As clad layer 3, a non-doped GaAs active layer 4, a P-type Al0.3Ga0.7As clad layer 5, and a P type GaAs cap layer 6 are sequentially laminated on an N-type GaAs substrate Then, an SiO2 film 7 is deposited on the layer 6, patterned, to form a striped pattern 8 of 40mum or less in width, the layer 3 is etched to the midway to form an etched portion 9. Thereafter, a high resistance AlGaAs crystal is selectively grown on the etched portion 9 by reduced pressure vapor- phase epitaxy of 100Torr or less of vacuum to form a buried layer 10 of the same level as the pattern 8. The pattern 8 is removed, and then cleaved. |
| 公开日期 | 1987-03-19 |
| 申请日期 | 1985-09-12 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/85073]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | FURUKAWA ELECTRIC CO LTD:THE |
| 推荐引用方式 GB/T 7714 | IWASAKI TAMOTSU,KASHIWA SUSUMU,MATSUO NOZOMI. Manufacture of semiconductor light emitting device. JP1987062581A. 1987-03-19. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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